bl galaxy electrical production specification pnp silicon epitaxial planar transistor 2SA1579W document number: bl/ssstf031 www.galaxycn.com rev.a 1 features z power dissipation.(p c =200mw) z excellent h fe linearity. applications z general purpose application. sot-323 ordering information type no. marking package code 2SA1579W hp/hq/hr sot-323 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -50 ma p c collector dissipation 200 mw t j, t stg junction and storage temperature -55~150 pb lead-free
bl galaxy electrical production specification pnp silicon epitaxial planar transistor 2SA1579W document number: bl/ssstf031 www.galaxycn.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-6v,i c =-2ma 180 560 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma -0.5 v transition frequency f t v ce =-12v, i c = -2ma f=30mhz 140 mhz collector output capacitance c ob v cb =-12v,i e =0,f=1mhz 3.2 pf classificantion of h fe rank s r range 180-390 270-560 marking rr rs
bl galaxy electrical production specification pnp silicon epitaxial planar transistor 2SA1579W document number: bl/ssstf031 www.galaxycn.com rev.a 3 package outline plastic surface mounted package sot-323 package information device package shipping 2SA1579W sot-323 3000/tape&reel sot-323 dim min max a 1.8 2.2 b 1.15 1.35 c 1.0typical d 0.15 0.35 e 0.25 0.40 g 1.2 1.4 h 0.02 0.1 j 0.1typical k 2.1 2.3 all dimensions in mm
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